Plastic surface mount large area power device
AssigneeMicrosemi Corporation
InventorsTracy Autry, Stephen G. Kelly, George A. Digiacomo, Christopher Alan Barnes
Life of this patent
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Abstract
A low profile, 1 or 2 die design, surface mount high power microelectronic package with coefficient of expansion (CTE) matched materials such as Silicon die to Molybdenum conductor (bond pads). The CTE matching of the materials in the package enables the device to withstand repeated, extreme temperature range cycling without failing or cracking. The package can be used for transient voltage suppression (TVS), Schottky diode, rectifier diode, or high voltage diodes, among other uses. The use of a heat sink metal conductor that has a very high modulus of elasticity allows for a very thin wall plastic locking to be utilized in order to minimize the footprint of the package.
Claims18
A device for high power applications, comprising:
- a first large area semiconductor die having a top surface and a bottom surface;
- a first conductive pad having a coefficient of thermal expansion matched to and similar in size to the first large area semiconductor die, and disposed upon the first large area semiconductor die top surface;
- an electrically conductive planar tab disposed upon the first conductive pad;
- and
- a thin key mold encapsulating the first semiconductor die, the tab, and the first conductive pad, the device packaged as a surface mount device.
Dependencies are inferred from the claim text.