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US 7,741,705 B2Granted
Semiconductor device and method of producing the same
AssigneeOki Semiconductor Co., Ltd.
InventorKiyonori Watanabe
Life of this patent
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Abstract
A semiconductor device includes a semiconductor substrate having an internal circuit; an electrode pad electrically connected to the internal circuit; an insulating film having a through hole exposing the electrode pad; and a re-distribution wiring pattern formed on the insulating film and electrically connected to the electrode pad. The semiconductor device further includes a recess groove formed in the insulating film around and adjacent to the re-distribution wiring pattern.
Claims6
A semiconductor device, comprising:
- a semiconductor substrate having an internal circuit;
- an electrode pad electrically connected to the internal circuit;
- an insulating film having a through hole exposing the electrode pad;
- a re-distribution wiring pattern formed on the insulating film and electrically connected to the electrode pad;
- a recess groove formed in the insulating film, said recess groove being situated outside the re-distribution wiring pattern and disposed adjacent to an edge of the re-distribution wiring pattern;
- and
- a sealing layer filled in the recess groove and covering the re-distribution wiring pattern so that the sealing layer directly contacts with the recess groove.
4 more elements
Dependencies are inferred from the claim text.