# US 7,741,700 B2 · Transistor with heat dissipating means > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,741,700 B2 - Document ID: US7741700B2 - Status: Granted - Kind: B2 - Application number: 11/547,402 - Filed: 2005-03-30 - Published: 2008-09-25 - Granted: 2010-06-22 - Earliest claimed: 2004-03-30 - Assignees: NEC Corporation; NEC Electronics Corporation - Inventors: Naotaka Kuroda; Masahiro Tanomura; Naoto Kurosawa - Web page: https://patentgrep.com/patent/US7741700B2 ## CPC - H10D 10/821: {Vertical heterojunction BJTs} - H10D 10/021: {of heterojunction BJTs [HBT]} - H10D 84/01: Manufacture or treatment - H10D 84/05: using Group III-V technology - H10D 84/617: {Combinations of vertical BJTs and only diodes} - H10W 40/22: characterised by their shape, e.g. having conical or cylindrical projections - H10D 62/824: comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor device having sufficiently high heat dissipation performance while inhibiting an increase in the area of a chip is provided. In semiconductor device 1, a plurality of HBTs 20 and a plurality of diodes 30 are one-dimensionally and alternately arranged on semiconductor substrate 10. Anode electrode 36 of diode 30 is connected to emitter electrode 27 of HBT 20 via common emitter wiring 42. Diode 30 works as heat dissipating elements dissipating to semiconductor substrate 10 the heat transmitted through common emitter wiring 42 from emitter electrode 27, and also works as a protection diode connected in parallel between an emitter and a collector of HBT 20. ## Claims ### Claim 1 A semiconductor device comprises: a sub-collector layer formed on a semiconductor substrate, a bipolar transistor formed by stacking a collector layer, a base layer and an emitter layer in this order on said sub-collector layer, and a heat dissipating means dissipating heat generated in said bipolar transistor to said semiconductor substrate via a wiring connected with an emitter electrode of said bipolar transistor, wherein said heat dissipating means is a pn junction diode composed of same layers as said sub-collector layer, collector layer and base layer of said bipolar transistor and spatially separated from said bipolar transistor, wherein said collector layer of said bipolar transistor and said collector layer of said pn junction diode are electrically connected to a common collector electrode via said sub-collector layer, and wherein one terminal of said diode is connected with said wiring, and wherein a width of said wiring connecting between said emitter electrode of said bipolar transistor and said terminal of said diode is not less than the length of the emitter electrode. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein said pn junction diode is a pin diode or p+n−n+ diode having depleted n− layer. ### Claim 3 (depends on 2) The semiconductor device according to claim 2, wherein said pin diode or p+n−n+ diode is composed of p+ layer having 1×1019 cm−3 or more of dose, n− layer having 1×1017 cm−3 or less of dose and n+ layer with 1×1018 cm−3 or more of dose. ### Claim 4 (depends on 1) The semiconductor device according to claim 1, wherein said wiring interconnects electrodes having the same function on a plurality of said bipolar transistors. ### Claim 5 (depends on 4) The semiconductor device according to claim 4, wherein said electrodes having the same function are emitter electrodes. ### Claim 6 (depends on 1) The semiconductor device according to claim 1, further comprising: a unit bipolar transistor comprising a plurality of said bipolar transistor; and wherein said heat dissipating means is formed between adjacent unit bipolar transistors. ### Claim 7 (depends on 6) The semiconductor device according to claim 6, wherein a plurality of said unit bipolar transistors is formed in a specific arrangement on said semiconductor substrate; and wherein said heat dissipating means is also formed on at least one peripheral side of said specific arrangement. ### Claim 8 (depends on 6) The semiconductor device according to claim 6, wherein a plurality of said unit bipolar transistors is formed in a specific arrangement on said semiconductor substrate; and wherein the area of a region provided with said heat dissipating means situated at a relatively central part of said specific arrangement is larger than the area of a region provided with said heat dissipating means situated at a relatively peripheral part of said specific arrangement. ### Claim 9 (depends on 8) The semiconductor device according to claim 8, wherein the area of said heat dissipating means depends on the width of said heat dissipating means in a direction parallel to said specific arrangement. ### Claim 10 (depends on 8) The semiconductor device according to claim 8, wherein the area of said heat dissipating means depends on the length of said heat dissipating means in a direction perpendicular to said certain arrangement. ### Claim 11 (depends on 8) The semiconductor device according to claim 8, wherein the area of said heat dissipating means depends on both width and length of said heat dissipating means. ### Claim 12 (depends on 8) The semiconductor device according to claim 8, wherein a plurality of said unit bipolar transistors are arranged in a specific direction and said wiring over the region of said heat dissipating means is extended in a direction perpendicular to said specific direction. ### Claim 13 (depends on 12) The semiconductor device according to claim 12, wherein said wiring is connected to a pad electrode at a terminal of said extended wiring. ### Claim 14 (depends on 1) The semiconductor device according to claim 1, wherein a plurality of said unit bipolar transistors are formed in a specific arrangement on said semiconductor substrate; wherein said wiring is extended to at least one direction perpendicular to said specific arrangement; and wherein said heat dissipating means is formed under said extended wiring. ### Claim 15 (depends on 1) The semiconductor device according to claim 1, wherein said wiring is formed on an insulating film covering said bipolar transistor and said heat dissipating means, and is connected to the emitter electrode of said bipolar transistor and to the terminal of said heat dissipating means via openings provided in said insulating film.