Semiconductor integrated circuit device
AssigneeSanyo Electric Co., Ltd.
InventorsRyo Kanda, Shigeaki Okawa, Kazuhiro Yoshitake
Life of this patent
Estimating the term…
Loading patent…
AssigneeSanyo Electric Co., Ltd.
InventorsRyo Kanda, Shigeaki Okawa, Kazuhiro Yoshitake
Estimating the term…
A semiconductor integrated circuit device according to the present invention includes an N-type embedded diffusion region between a substrate and an epitaxial layer in first and second island regions serving as small signal section. The N-type embedded diffusion region connects to N-type diffusion regions having supply potential. The substrate and the epitaxial layer are thus partitioned by the N-type embedded diffusion region having supply potential in the island regions serving as small signal section. This structure prevents the inflow of free carriers (electrons) generated from a power NPN transistor due to the back electromotive force of the motor into the small signal section, thus preventing the malfunction of the small signal section.
A semiconductor integrated circuit device comprising:
A semiconductor integrated circuit device comprising:
Dependencies are inferred from the claim text.