Photoelectric conversion device and photodetector apparatus having the same
AssigneeSamsung Electronics Co., Ltd.
InventorsDae-Ho Choo, Dong-Cheol Kim
Life of this patent
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Abstract
A photoelectric conversion device includes an intrinsic semiconductor layer, a first conductive type semiconductor layer disposed on a first side of the intrinsic semiconductor layer, and a second conductive type semiconductor layer disposed on a second side of the intrinsic semiconductor layer opposite the first side. The intrinsic semiconductor layer includes an amorphous semiconductor layer and a crystalline semiconductor layer including a plurality of crystals. A diameter of a crystal of the plurality of crystals is equal to or less than approximately 100 angstroms.
Claims24
A photoelectric conversion device comprising:
- an intrinsic semiconductor layer comprising:
- at least one of an amorphous semiconductor layer;
- and
- at least one of crystalline semiconductor layer including a plurality of crystals;
- a first conductive type semiconductor layer disposed on a first side of the intrinsic semiconductor layer;
- and
- a second conductive type semiconductor layer disposed on a second side of the intrinsic semiconductor layer opposite the first side.
A photodetector apparatus comprising:
- a base substrate;
- a photoelectric conversion device disposed on the base substrate and comprising:
- an intrinsic semiconductor layer comprising:
- at least one of an amorphous semiconductor layer;
- and
- at least one of a crystalline semiconductor layer including a plurality of crystals;
- a first conductive type semiconductor layer disposed on a first surface of the intrinsic semiconductor layer;
- and
- a second conductive type semiconductor layer disposed on a second opposite surface of the intrinsic semiconductor layer;
- a bias line disposed on the base substrate and electrically connected to the photoelectric conversion device to apply a bias signal to the photoelectric conversion device;
- and
- a signal line disposed on the base substrate to output a current from the photoelectric conversion device, wherein the photoelectric conversion device receives a light from an external source,
- the light causes a photoelectric conversion reaction in the photoelectric conversion device, and
- the photoelectric conversion device outputs the current based on the photoelectric conversion reaction and the bias signal.
Dependencies are inferred from the claim text.