Photoelectric conversion layer-stacked solid-state imaging element

A photoelectric conversion layer-stacked solid-state imaging element comprising:

• a semiconductor substrate having a signal reading circuit formed thereon;
• at least one layer of photoelectric conversion layer each of which is provided interposed between a common electrode layer and a plurality of pixel electrode layers corresponding to pixels, each of said pixels having a lower part, said at least one layer of photoelectric conversion layer being stacked above a light shielding layer which is positioned above the semiconductor substrate;
• and
• inhibiting structures below said photoelectric conversion layer adapted to inhibit a reflected light, which is produced by reflection of incident light on the light shielding layer after said light has passed through said at least one layer of photoelectric conversion layer and entered into a pixel, from entering in a direction toward adjacent pixels to the pixel.