Magnetic random access memory and method of manufacturing the same

A magnetic random access memory comprising:

• a substrate;
• a magnetoresistive effect element formed above the substrate and having a fixed layer in which a magnetization direction is fixed, a recording layer in which a magnetization direction is reversible, and a nonmagnetic layer formed between the fixed layer and the recording layer, a hollow portion being formed in a center of the recording layer, and the magnetization directions in the fixed layer and the recording layer taking one of a parallel state and an antiparallel state, which are perpendicular to an upper surface of the substrate, in accordance with a direction of an electric current supplied between the fixed layer and the recording layer;
• an insulating layer formed in the hollow portion;
• a wiring connected to one terminal of the magnetoresistive effect element;
• and
• a transistor formed in the substrate and connected to the other terminal of the magnetoresistive effect element.