Semiconductor device and method for fabricating the same
AssigneeFujitsu Limited
InventorsChikako Yoshida, Hiroshi Minakata, Masaomi Yamaguchi, Shinji Miyagaki, Yasuyuki Tamura
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Abstract
The semiconductor device comprises a gate insulating film including a first dielectric film of HfxAl1-xOy (0.7<x<1) formed over a semiconductor substrate, and a second dielectric film different from the first dielectric film formed over the first dielectric film; and a gate electrode formed over the gate insulating film and including a polycrystalline silicon film, whereby the local abnormal growth of the polycrystalline silicon film in the process of forming the polycrystalline silicon film is prevented, and the gate leakage current can be much decreased.
Claims4
A semiconductor device comprising:
- a gate insulating film including a first dielectric film of HfxAl1-xOy in which x is 0.7<x<1, formed over a semiconductor substrate, and a second dielectric film of a nitrogen-content silicon-based insulating film, an alumina film or an HfxAl1-xOy film in which X is 0<x<0.7 formed over the first dielectric film;
- and
- a gate electrode formed on the gate insulating film and including a polycrystalline silicon film.
A semiconductor device comprising:
- a gate insulating film formed on a semiconductor substrate and including an HfxAl1-xOy film having a thickness below 1 nm in which x is 0.7<x<1;
- and
- a gate electrode formed on the gate insulating film and including a polycrystalline silicon film.
Dependencies are inferred from the claim text.