Semiconductor substrates having useful and transfer layers
AssigneeS.O.I.Tec Silicon on Insulator Technologies
InventorsBruno Ghyselen, Fabrice Letertre
Life of this patent
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Abstract
A semiconductor substrate that includes a relatively thin monocrystalline useful layer, an intermediate layer transferred from a source substrate, and a relatively thick layer of a support present on one of the useful layer of the intermediate layer. The support is made of a deposited material that has a lower quality than that of one or both of the intermediate and useful layers. A bonding layer may be included on one of the intermediate layer or the useful layer, or both, to facilitate bonding of the layers an a thin layer may be provided between the useful layer and intermediate layer. These final substrates are useful in optic, electronic, or optoelectronic applications.
Claims20
A semiconductor substrate comprising a monocrystalline useful layer, a support, a thin layer located between and in contact with each of the monocrystalline useful layer and the support, wherein the thin layer and the monocrystalline useful layer each have a thickness that is relatively thin compared to the relatively thick layer of the support, and wherein the support is made of a material that is grown or deposited on the thin layer, wherein the grown or deposited material has a lower crystalline quality than that of the monocrystalline useful layer, and wherein the monocrystalline useful layer is made of compounds of at least two elements including at least one element of aluminum, indium, or gallium.
A semiconductor substrate comprising a monocrystalline useful layer, a support, a thin layer located between and in contact with each of the monocrystalline useful layer and the support, wherein the thin layer and the monocrystalline useful layer each have a thickness that is relatively thin compared to the relatively thick layer of the support, and wherein the support is made of a material that is grown or deposited on the thin layer, wherein the grown or deposited material has a lower crystalline quality than that of the monocrystalline useful layer, and wherein the thin layer is at least one of silicon, silicon carbide, a monocrystalline material, sapphire, diamond, gallium nitride, aluminum nitride, or a combination of at least two of these materials.
A semiconductor substrate comprising a monocrystalline useful layer, a support, a thin layer located between and in contact with each of the monocrystalline useful layer and the support, wherein the thin layer and the monocrystalline useful layer each have a thickness that is relatively thin compared to the relatively thick layer of the support, and wherein the support is made of a material that is grown or deposited on the thin layer, wherein the grown or deposited material has a lower crystalline quality than that of the monocrystalline useful layer, wherein the support material is made of at least one of silicon, silicon carbide, sapphire, diamond, graphite, gallium nitride, aluminum nitride, or a combination of at least two of these materials.
A semiconductor substrate comprising a monocrystalline useful layer, a support, a thin layer located between and in contact with each of the monocrystalline useful layer and the support, wherein the thin layer and the monocrystalline useful layer each have a thickness that is relatively thin compared to the relatively thick layer of the support, and wherein the support is made of a material that is grown or deposited on the thin layer, wherein the grown or deposited material has a lower crystalline quality than that of the monocrystalline useful layer, and wherein the support is an epitaxially or quasi-epitaxially material that is grown on the thin layer.
Dependencies are inferred from the claim text.