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US 7,741,671 B2Granted
Capacitor for a semiconductor device and manufacturing method thereof
AssigneeHynix Semiconductor Inc.
InventorsPyeong Won Oh, Woo Jin Kim, Hoon Jung Oh, Hyo Gun Yoon, Hyo Seob Yoon, Baik II Choi
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Abstract
Disclosed is a capacitor for a semiconductor device, comprising: a lower electrode formed over a predetermined lower structure on a semiconductor substrate; an aluminum oxynitride film formed over the lower electrode and having a low leakage current characteristic; a yttrium oxynitride film formed over the aluminum oxynitride film and having a higher dielectric constant than the aluminum oxynitride film; and an upper electrode formed over the yttrium oxynitride film, and a manufacturing method thereof.
Claims5
A capacitor for a semiconductor device, comprising:
- a lower electrode formed over a predetermined lower structure on a semiconductor substrate;
- an aluminum oxynitride film formed over the lower electrode and having a low leakage current characteristic;
- a yttrium oxynitride film formed over the aluminum oxynitride film and having a relatively higher dielectric constant than the aluminum oxynitride film;
- and
- an upper electrode formed over the yttrium oxynitride film.
2 more elements
Dependencies are inferred from the claim text.