Nonvolatile memory cells employing a transition metal oxide layers as a data storage material layer and methods of manufacturing the same

A non-volatile memory cell, comprising:

• a semiconductor substrate having an electrically insulating layer thereon;
• a data storage element having a transition metal oxide region therein, on the electrically insulating layer wherein the transition metal oxide region comprises a transition metal selected from a group consisting of nickel, cobalt, zinc and copper;
• an electrically conductive buffer layer pattern of a first material on the electrically insulating layer, said first material selected from a group consisting of Ti, TiN, TiAlN, Ta and TaN;
• and
• a lower electrode of a second material different from the first material, extending between the electrically conductive buffer layer pattern and the transition metal oxide region, said second material selected from a group consisting of Ir, Pt, IrO, TiN, TiAlN, Ru, RuO and polysilicon.