US 7,741,668 B2 · Nonvolatile ferroelectric memory device

Abstract

A nonvolatile ferroelectric memory device is provided so as to control read/write operations of a nonvolatile memory cell using a channel resistance of the memory cell which is differentiated by polarity states of a ferroelectric material. In the memory device, an insulating layer is formed on a bottom word line, and a floating channel layer comprising a N-type drain region, a P-type channel region and a N-type source region is formed on the insulating layer. Then, a ferroelectric layer is formed on the floating channel layer, and a word line is formed on the ferroelectric layer. As a result, the resistance state induced to the channel region is controlled depending on the polarity of the ferroelectric layer, thereby regulating the read/write operations of the memory cell array.

Claims4

Dependent claims

A nonvolatile ferroelectric memory device comprising a unit cell array which includes:

a bottom word line;
a plurality of insulating layers formed on the bottom word line, respectively;
a floating channel layer comprising a plurality of P-type channel regions located on the plurality of insulating layers and a plurality of N-type drain and source regions which are alternately electrically connected in series to the plurality of P-type channel regions;
a plurality of ferroelectric layers formed respectively on the plurality of P-type channel regions of the floating channel layer;
and
a plurality of word lines formed on the plurality of ferroelectric layers, respectively;
wherein the unit cell array reads and writes a plurality of data by inducing different channel resistance to the plurality of P-type channel regions depending on polarity states of the plurality of ferroelectric layers.

4 more elements

Dependencies are inferred from the claim text.

Nonvolatile ferroelectric memory device

Life of this patent

Nonvolatile ferroelectric memory device

Life of this patent

Abstract

Claims4