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US 7,741,664 B2Granted
Complementary metal oxide semiconductor image sensor and method for fabricating the same
AssigneeKorea Advanced Institute of Science and Technology
InventorsYang-Kyu Choi, Kuk-Hwan Kim
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Abstract
Provided are a CMOS image sensor and a method for fabricating the same. A nanopillar is plurally formed at an upper end of a light receiving element.
Claims17
A CMOS (complementary metal oxide semiconductor) image sensor comprising:
- a semiconductor substrate;
- a light receiving element formed in the semiconductor substrate, wherein the light receiving element comprises a first-conductivity-type semiconductor layer and a second-conductivity-type semiconductor layer located over the first-conductivity-type semiconductor layer;
- a plurality of nanopillars located directly on and adjacent to the second-conductivity-type semiconductor layer of the light receiving region;
- a floating diffusion region formed in the semiconductor, in parallel with the light receiving element;
- a transfer gate positioned at an upper side between the light receiving element and the floating diffusion region;
- and
- a transistor region for data-processing a detected light from the light receiving region into an electric signal.
4 more elements
A CMOS (complementary metal oxide semiconductor) image sensor comprising:
- a light receiving element;
- a plurality of nanopillars located over the light receiving element;
- wherein:
- the light receiving element comprises a first-conductivity-type semiconductor layer and a second-conductivity-type semiconductor layer located over the first-conductivity-type semiconductor layer, and
- the plurality of nanopillars are located directly on and adjacent to the second-conductivity-type semiconductor layer of the light receiving element.
2 more elements
Dependencies are inferred from the claim text.