Back to results
US 7,741,656 B2Granted
Semiconductor device and manufacturing the same
AssigneesRenesas Technology Corp., Renesas Eastern Japan Semiconductor, Inc.
InventorsFumitaka Nakayama, Masatoshi Morikawa, Yutaka Hoshino, Tetsuo Uchiyama
Life of this patent
Estimating the term…
Abstract
A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film.
Claims12
A semiconductor device comprising:
- a first capacitor element including a first lower electrode, a first upper electrode and a first insulating film formed between the first lower electrode and the first upper electrode, wherein the first upper electrode is formed over a semiconductor substrate;
- a first interlayer insulating film formed over the first capacitor element and over a semiconductor substrate;
- an inductor formed over the first interlayer insulating film;
- and
- a second capacitor element formed over the first interlayer insulating film, the second capacitor element including a second lower electrode, a second upper electrode and a second insulating film formed between the second lower electrode and the second upper electrode,
- wherein a first circuit operating in a first frequency band is arranged on the semiconductor substrate and includes the first capacitor element,
- wherein a second circuit operating in a second frequency band is arranged on the semiconductor substrate and includes the second capacitor element,
- wherein the frequency included in the first frequency band is lower than the frequency included in the second frequency band.
5 more elements
A semiconductor device comprising:
- a first capacitor element including a first lower electrode, a first upper electrode and a first insulating film formed between the first lower electrode and the first upper electrode,
- wherein the first upper electrode is formed over a semiconductor substrate;
- a first interlayer insulating film formed over the first capacitor element and over a semiconductor substrate;
- and
- a second capacitor element formed over the first interlayer insulating film, the second capacitor element including a second lower electrode, a second upper electrode and a second insulating film formed between the second lower electrode and the second upper electrode,
- wherein a first circuit operating in a first frequency band is arranged on the semiconductor substrate and includes the first capacitor element,
- wherein a second circuit operating in a second frequency band is arranged on the semiconductor substrate and includes the second capacitor element, and
- wherein the frequency included in the first frequency band is lower than the frequency included in the second frequency band.
5 more elements
Dependencies are inferred from the claim text.