Semiconductor light emitting device and method for manufacturing the same

A method for manufacturing a semiconductor light emitting device comprising a semiconductor light emitting element, the method comprising:

• forming a mask on which circular patterns are periodically configured, on a light extracted surface of a semiconductor light emitting element;
• selectively etching the light extracted surface by a reactive ion etching technique using the mask to form a cylindrical portion of each of convex structures configuring a diffraction grating structure and setting a period between the convex structures longer than 1/(a refractive index of an external medium+a refractive index of the convex structures) of an emission wavelength and equal to or shorter than the emission wavelength;
• and
• etching the light extracted surface by a physical etching technique using an inert gas to form a conical mesa portion at a bottom of each of the cylindrical portions, forming a conical portion at a top of the cylindrical portion, and setting a circle-equivalent average diameter of the cylindrical portion to be substantially constant from the mesa portion to the conical portion and to be within a range of ⅓ to 9/10 of a circle-equivalent average diameter of a bottom of the mesa portion.