Control layer for a nanoscale electronic switching device
AssigneeHewlett-Packard Development Company, L.P.
InventorsDuncan Stewart, Douglas Ohlberg, R. Stanley Williams, Philip J. Kuekes
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Abstract
A control layer for use in a junction of a nanoscale electronic switching device is disclosed. The control layer includes a material that is chemically compatible with a connecting layer and at least one electrode in the nanoscale switching device. The control layer is adapted to control at least one of electrochemical reaction paths, electrophysical reaction paths, and combinations thereof during operation of the device.
Claims30
A control layer for use in a junction of a nanoscale electronic switching device, the control layer comprising a material that 1) is chemically compatible with a connecting layer and at least one electrode in the nanoscale switching device and 2) is a source of a material for the connecting layer or a sink for a material from the connecting layer, the control layer configured to control at least one of electrochemical reaction paths, electrophysical reaction paths, and combinations thereof during operation of the device.
A nanoscale electronic switching device, comprising:
- at least one bottom electrode;
- at least one top electrode, the at least one top electrode crossing the at least one bottom electrode at a non-zero angle, thereby forming a junction;
- at least one connecting layer operatively disposed in the junction, the at least one connecting layer adapted to facilitate electronic switching via at least one of electrochemical reactions, electrophysical reactions, and combinations thereof;
- and
- at least one control layer established between the at least one connecting layer and at least one of the at least one bottom electrode and the at least one top electrode, the at least one control layer being a source of a material for the at least one connecting layer or a sink for a material from the at least one connecting layer, and the at least one control layer adapted configured to control at least one of electrochemical reaction paths, electrophysical reaction paths, and combinations thereof during operation of the device.
A method of forming a nanoscale electrical switching device, the method comprising:
- crossing at least one top electrode with at least one bottom electrode at a non-zero angle, thereby forming a junction;
- and
- operatively disposing at least one connecting layer in the junction, the at least one connecting layer adapted to facilitate electronic switching via at least one of electrochemical reactions, electrophysical reactions, and combinations thereof;
- and
- operatively forming at least one control layer between the at least one connecting layer and at least one of the at least one bottom electrode and the at least one top electrode, the at least one control layer being a source of a material for the connecting layer or a sink for a material from the connecting layer and configured to control at least one of electrochemical reaction paths, electrophysical reaction paths, and combinations thereof during operation of the device.
Dependencies are inferred from the claim text.