ZnO-based semiconductor device

Abstract

Provided is a ZnO-based semiconductor device capable of growing a flat ZnO-based semiconductor layer on an MgZnO substrate having a main surface on the lamination side oriented in a c-axis direction. ZnO-based semiconductor layers 2 to 6 are epitaxially grown on an MgxZn1-xO (0≦x<1) substrate 1 having a +C surface (0001), as a main surface, inclined at least in an m-axis direction. A p-electrode 8 is formed on the ZnO-based semiconductor layer 5, and an n-electrode 9 is formed on the underside of the MgxZn1-xO substrate 1. Thereby, steps regularly arranged in the m-axis direction can be formed on the surface of the MgxZn1-xO substrate 1, and a phenomenon called step bunching is prevented. Consequently, the flatness of a film of the semiconductor layers laminated on the substrate 1 can be improved.

Dependencies are inferred from the claim text.