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US 7,741,636 B2Granted
Programmable resistive RAM and manufacturing method
AssigneeMacronix International Co., Ltd.
InventorChiaHua Ho
Life of this patent
Estimating the term…
Abstract
Integrated circuit nonvolatile memory uses programmable resistive elements. In some examples, conductive structures such as electrodes are prepared, and the programmable resistive elements are laid upon the prepared electrodes. This prevents contamination of the programmable resistive elements from previous fabrication steps.
Claims8
An integrated circuit with nonvolatile memory cells, comprising:
- circuitry accessing particular nonvolatile memory cells, the circuitry including:
- 1) conductive rows accessing the nonvolatile memory cells by row and 2) conductive columns accessing the nonvolatile memory cells by column;
- and
- programmable resistive elements of the nonvolatile memory cells, each of the programmable resistive elements conductively connected with the conductive rows and the conductive columns, wherein the programmable resistive elements are positioned vertically above the conductive rows and the conductive columns.
1 more element
Dependencies are inferred from the claim text.