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US 7,741,632 B2Granted
InGaAIN light-emitting device containing carbon-based substrate and method for making the same
AssigneeLattice Power (Jiangxi) Corporation
InventorsChuanbing Xiong, Fengyi Jiang, Li Wang, Yingwen Tang, Changda Zheng, Junlin Liu, Weihua Liu, Guping Wang
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Abstract
One embodiment of the present invention provides an InGaAlN-based semiconductor light-emitting device which comprises an InGaAlN-based semiconductor multilayer structure and a carbon-based substrate which supports InGaAlN-based semiconductor multilayer structure, wherein the carbon-based substrate comprises at least one carbon-based layer. This carbon-based substrate has both high thermal conductivity and low electrical resistivity.
Claims20
An InGaAlN-based semiconductor light-emitting device, comprising:
- an InGaAlN-based semiconductor multilayer structure;
- and
- a carbon-based substrate which supports the InGaAlN-based semiconductor multilayer structure, wherein the carbon-based substrate comprises a first carbon-based layer and at least one metal layer on a front-side of the first carbon-based layer facing the InGaAlN-based semiconductor multilayer structure, and wherein the first carbon-based layer includes graphite.
Dependencies are inferred from the claim text.