Apparatus and method for focused electric field enhanced plasma-based ion implantation
AssigneeCity University of Hong Kong
InventorsPaul K. Chu, Liuhe Li
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Abstract
There is disclosed an apparatus and method for focused electric field enhanced plasma-based ion implantation. The apparatus includes an implantation chamber, a vacuum pump for maintaining the pressure in the implantation chamber at a desired level, a sample holder, means for applying a negative potential to the sample holder, and means for supplying a gaseous or vaporized implantation material. The supplying means takes the form of a feed conduit having an exit opening located in the implantation chamber above the sample holder, and when a negative potential is applied to the sample holder the exit opening of the feed conduit is maintained at a potential that is positive relative to the sample holder.
Claims14
An apparatus for focused electric field enhanced plasma-based ion implantation comprising:
- an implantation chamber,
- a vacuum pump for maintaining the pressure in said implantation chamber at a desired level,
- a sample holder,
- means for applying a negative potential to said sample holder, and
- means for supplying a gaseous or vaporized implantation material comprising a feed conduit having an exit opening located in said implantation chamber above said sample holder,
- wherein said feed conduit exit opening and said sample holder each has an area dimension, said area of said feed conduit exit opening being smaller than said area of sample holder, and
- wherein, when said negative potential is applied to said sample holder, said feed conduit exit opening is maintained at a potential that is positive relative to said sample holder.
Dependencies are inferred from the claim text.