EUV light source, EUV exposure equipment, and semiconductor device manufacturing method

An EUV exposure apparatus comprising:

• a plasma EUV light source comprising:
• a target comprising fine solid particles dispersed in a medium, the medium being a liquid formed by heating and melting a plastic resin,
• an agitation mechanism for agitating the medium in a container so as to prevent the fine solid particles from settling, and
• an energy source for applying energy to the target to produce plasma,
• wherein the plasma generates and emits EUV light,
• an illumination optical system, and
• a projection optical system,
• wherein a pattern formed on a mask is exposed by the EUV light using the illumination optical system and the pattern is transferred to a substrate by the projection optical system.

A semiconductor device manufacturing method comprising the steps of:

• producing EUV light from a plasma formed by applying energy to a target, wherein the target comprises fine solid particles dispersed in a medium, the medium being a liquid formed by heating and melting a plastic resin, and wherein the medium is agitated in a container by an agitation mechanism so as to prevent the fine solid particles from settling;
• exposing a pattern formed on a mask to the EUV light;
• and
• transferring the pattern formed on the mask to a substrate using the EUV light.