Image sensor and image sensing apparatus comprising waveguide and multilayer wiring structure

An image sensor comprising:

• a photoelectric conversion unit having a light receiving surface;
• a transfer transistor which has a gate electrode and transfers charges generated in the photoelectric conversion unit to a charge-voltage converter;
• a multilayer wiring structure which defines an aperture region above the photoelectric conversion unit;
• and
• a waveguide which guides light entering the aperture region to the light receiving surface,
• wherein the multilayer wiring structure includes
• a first wiring layer which is an uppermost wiring layer and defines two contour sides of the aperture region in a first direction, and
• a second wiring layer which is arranged between the gate electrode and the first wiring layer in a direction perpendicular to the light receiving surface, and defines two contour sides of the aperture region in a second direction, and
• wherein the gate electrode is arranged to overlap part of the light receiving surface and have a longitudinal direction along the first direction.