Method for fabricating semiconductor device
AssigneePanasonic Corporation
InventorsAkira Ueki, Takeshi Harada, Atsushi Ishii
Life of this patent
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Abstract
After a first insulating film is formed on a substrate, a wiring groove is formed in the first insulating film, and then a wire is formed inside the wiring groove. Subsequently, a protection film is formed on the first insulating film and on the wire, and then a hard mask film is formed on the protection film. After that, the hard mask film is patterned. Subsequently, the protection film and the first insulating film are partially removed using the patterned hard mask film to form an air gap groove, and then a second insulating film is formed to close an upper portion of the air gap groove for forming an air gap.
Claims19
A method for fabricating a semiconductor device comprising the steps of:
- (a) forming a first insulating film on a substrate;
- (b) forming a wiring groove in the first insulating film;
- (c) forming a wire inside the wiring groove;
- (d) forming a protection film on the first insulating film and on the wire;
- (e) forming a hard mask film on the protection film;
- (f) patterning the hard mask film;
- (g) partially removing the protection film and the first insulating film using the patterned hard mask film to form an air gap groove;
- and
- (h) forming a second insulating film to close an upper portion of the air gap groove for forming an air gap, wherein:
- the method further includes, between the steps (g) and (h), step of (i) removing the hard mask film, and
- the step (i) includes performing wet etching to remove the hard mask film, and removing part of the first insulating film located near the air gap groove to extend the air gap groove.
A method for fabricating a semiconductor device comprising the steps of:
- (a) forming a first insulating film on a substrate;
- (b) forming a plurality of wires adjacent to each other in the first insulating film;
- (c) forming a hard mask film on the first insulating film and on the plurality of wires;
- (d) patterning the hard mask film to form an opening;
- (g) removing a part of the first insulating film located under the opening of the patterned hard mask film to form an air gap groove;
- and
- (h) forming a second insulating film to close an upper portion of the air gap groove for forming an air gap, wherein:
- a width of the opening is equal to or larger than a size of an inter-wire space of the plurality of wires, and
- the hard mask film is a TEOS film, a SiOC film, a SiN film, s SiCO film, a SiCN film or a metal film.
Dependencies are inferred from the claim text.