Method of forming a semiconductor device having dummy features

A method for forming a semiconductor device, the method comprising:

• providing a plurality of features in a layout;
• selecting critical features from the plurality of features;
• placing a first plurality of short-range dummy etch features in the layout at a first distance from the critical, wherein each of the first plurality of short-range dummy etch features has a first width;
• removing at least one of the first plurality of short-range dummy etch features from the layout so that a second plurality of short-range dummy etch features remains;
• placing a third plurality of short-range dummy etch features in the layout at a second distance from critical features after removing at least one of the first plurality of short-range dummy etch features, wherein each of the third plurality of short-range dummy etch features has a second width and the second width is greater than the first width;
• and
• using the layout to pattern a layer on a semiconductor substrate.

A method for forming a semiconductor device, the method comprising:

• providing a semiconductor substrate having a first layer;
• forming critical features and dummy etch features in the first layer, wherein locations of the dummy etch features are determined by:
• providing a plurality of features in a first level of a layout;
• selecting critical features from the plurality of features;
• determining a plurality of first distances between each of the critical features and any other of the plurality of features;
• placing a first short-range dummy etch features in the layout at a first distance from a first critical feature when the first distance is no greater than a predetermined distance;
• determining a plurality of second distances between each of the critical features and the first short-range dummy etch features;
• and
• placing second short-range dummy etch features in the layout at a second distance from a second critical feature when the second distance is no greater than the predetermined distance, wherein the second distance is greater than the first distance;
• and
• patterning the first layer to form the critical features, the first short-range dummy etch features, and the second short-range dummy etch features in the first layer.