Method for manufacturing a semiconductor device using the self aligned contact (SAC) process flow for semiconductor devices with aluminum metal gates
AssigneeIntel Corporation
InventorsVinay B. Chikarmane, Yang Cao
Life of this patent
Estimating the term…
Abstract
In one embodiment, a method, comprises forming a diffusion layer on a semiconductor substrate, forming a selectively deposited metal or metal alloy on an aluminum gate structure by removing an aluminum oxide layer from the aluminum gate structure and depositing a zinc layer on the aluminum gate structure by a zincating process, and selectively depositing a sacrificial metal or metal alloy cap on the aluminum gate layer by displacing the zinc layer. This embodiment enables the SAC process flow on devices with Aluminum gates.
Claims7
A method of manufacturing a semiconductor device using the SAC process flow for semiconductor devices with aluminum metal gates, comprising:
- forming a diffusion layer on a substrate;
- forming one or more aluminum gate structures on the diffusion layer;
- forming a barrier layer on the gate structures;
- forming an oxide layer on the barrier layer;
- polishing the oxide layer and the barrier layer to expose portions of the one or more gate structures;
- removing an aluminum oxide layer from at least one aluminum gate structure by a zincating process;
- depositing a zinc layer on the aluminum gate structure;
- and
- then selectively depositing a metal or metal alloy on the aluminum layer using an electroless deposition technique catalyzed by the zinc layer.
Dependencies are inferred from the claim text.