Metal line of semiconductor device and method for forming the same
AssigneeHynix Semiconductor Inc.
InventorsJeong Tae Kim, Seung Jin Yeom, Baek Mann Kim, Dong Ha Jung
Life of this patent
Estimating the term…
Abstract
A metal line of a semiconductor device includes an insulation layer formed on a semiconductor substrate and having a metal line forming region. A diffusion barrier is formed on a surface of the metal line forming region of the insulation layer. The diffusion barrier has a multi-layered structure of a V layer, a VxNy layer and a VxNyOz layer. A metal layer is formed on the diffusion barrier to fill the metal line forming region of the insulation layer.
Claims30
A metal line of a semiconductor device, comprising:
- an insulation layer formed on a semiconductor substrate and having a metal line forming region;
- a diffusion barrier formed on a surface of the metal line forming region of the insulation layer and having a multi-layered structure comprising a V layer, a VxNy layer and a VxNyOz layer, wherein the V layer, the VxNy layer and the VxNyOz layer are formed on a surface of the insulation layer in sequence;
- and
- a metal layer formed on the diffusion barrier in the metal line forming region of the insulation layer.
A method for forming a metal line of a semiconductor device, comprising the steps of:
- forming an insulation layer having a metal line forming region on a semiconductor substrate;
- forming a V layer on the insulation layer and the surface of the metal line forming region;
- forming a VxNy layer on the V layer;
- forming a VxNyOz layer by oxidating a surface of the VxNy layer, so that a diffusion barrier having a multi-layered structure of the V layer, the VxNy layer and the VxNyOz layer is formed on the insulation layer and a surface of the metal line forming region, wherein the V layer, the VxNy layer and the VxNyOz are formed on a surface of the insulation layer in sequence;
- and
- forming a metal layer on the diffusion barrier in the metal line forming region.
Dependencies are inferred from the claim text.