Semiconductor device and method for manufacturing the same

A method for manufacturing a semiconductor device, comprising forming a conductive plug penetrating an insulating film over a semiconductor substrate and connecting to a conductor under the insulating film, wherein the method comprises the steps of:

• forming a pedestal on a conductor, said pedestal being formed by patterning a non-silicon-containing film using silicon oxide as a mask, said pedestal comprising a non-silicon-containing pattern composed an organic material or a carbon-containing material;
• forming an insulating film to bury the pedestal;
• forming a first hole in the insulating film so as to expose a top surface of the pedestal, the first hole having a first cross section at which the top surface of the pedestal is exposed;
• completely removing the pedestal to form a second hole continuous with the first hole so as to expose a surface of the conductor, the second hole having a second cross section at which the second hole is continuous with the first hole, the first cross section being smaller than the second hole;
• and
• filling the first hole and the second hole with a conductive material to form a conductive plug penetrating the insulating film and connecting to the conductor.

A method for manufacturing a semiconductor device, comprising the steps of:

• forming a conductive plug in a first interlayer insulating film formed over a semiconductor substrate;
• forming a pedestal on the conductive plug, said pedestal being formed by patterning a non-silicon-containing film using silicon oxide as a mask, said pedestal comprising a non-silicon-containing pattern composed an organic material or a carbon-containing material;
• forming a second interlayer insulating film to bury the pedestal;
• forming a first hole in the second interlayer insulating film so as to expose a top surface of the pedestal, the first hole having a first cross section at which the top surface of the pedestal is exposed;
• completely removing the pedestal to form a second hole continuous with the first hole so as to expose a surface of the conductive plug, the second hole having a second cross section at which the second hole is continuous with the first hole, the first cross section being smaller than the second hole;
• forming a first conductive layer on an inner surface of the first hole and the second hole to form a lower electrode comprising the first conductive layer and connecting to the conductive plug;
• forming a dielectric layer on the first conductive layer in the first hole and the second hole;
• and
• forming a second conductive layer on the dielectric layer in the first hole and the second hole to form a capacitor comprising an upper electrode, the dielectric layer, and the lower electrode, the upper electrode comprising the second conductive layer.

A method for manufacturing a semiconductor device, comprising forming a hole penetrating an interlayer insulating film over a semiconductor substrate, wherein the method comprises the steps of:

• forming a first non-silicon-containing film composed of one of an organic material and a carbon-containing material that contain no silicon over the semiconductor substrate;
• forming a first silicon oxide film on the first non-silicon-containing film;
• forming a first resist pattern on the first silicon oxide film;
• etching the first silicon oxide film using the first resist pattern as a mask;
• etching the first non-silicon-containing film using the etched first silicon oxide film as a mask to form a pedestal at a position where a hole is to be formed;
• forming an interlayer insulating film composed of silicon oxide so as to bury the pedestal;
• forming, on the interlayer insulating film, a second non-silicon-containing film comprised of one of an organic material and a carbon-containing material that contain no silicon;
• forming a second silicon oxide film on the second non-silicon-containing film;
• forming a second resist pattern on the second silicon oxide film;
• etching the second silicon oxide film using the second resist pattern as a mask;
• etching the second non-silicon-containing film using the etched second silicon oxide film as a mask;
• etching the interlayer insulating film using the etched second non-silicon-containing film as a mask to form a first hole so as to expose a top surface of the pedestal;
• and
• etching away the pedestal to form a second hole continuous with the first hole, so that a hole penetrating the interlayer insulating film is formed.