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US 7,741,211 B2Granted
Method for manufacturing a semiconductor device
AssigneeDongbu HiTek Co., Ltd.
InventorJeong Yel Jang
Life of this patent
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Abstract
A semiconductor device can include a first interlayer dielectric layer disposed on a substrate, and an air gap defined in a portion of the first interlayer dielectric layer. The air gap can be formed within trenches etched into the first interlayer dielectric layer. An etch stop layer is disposed on the first interlayer dielectric layer and the air gap, and includes a hole communicating with the air gap.
Claims9
A method for manufacturing a semiconductor device, comprising:
- forming a first interlayer dielectric layer on a substrate;
- forming at least one trench for an air gap in the first interlayer dielectric layer;
- forming an etch stop layer on the first interlayer dielectric layer having the at least one trench for an air gap;
- selectively etching the etch stop layer to form a plurality of holes;
- forming a photoresist layer in the at least one trench for an air gap before forming the etch stop layer on the first interlayer dielectric layer;
- and
- removing the photoresist layer in the at least one trench after selectively etching the etch stop layer to form the plurality of holes, thereby forming an air gap in the first interlayer dielectric layer.
4 more elements
A method for manufacturing a semiconductor device, comprising:
- forming a first interlayer dielectric layer on a substrate;
- forming at least one trench for an air gap in the first interlayer dielectric layer;
- forming an etch stop layer on the first interlayer dielectric layer having the at least one trench for an air gap;
- selectively etching the etch stop layer to form a plurality of holes;
- forming a first photoresist layer on the first interlayer dielectric layer including the at least one trench for an air gap;
- selectively removing the first photoresist layer on a trench defined for formation of a metal line;
- and
- forming a metal line by depositing metal in the trench defined for formation of the metal line and planarizing the metal layer and the first photoresist layer until the first interlayer dielectric layer is exposed.
5 more elements
Dependencies are inferred from the claim text.