Contact structure of semiconductor device and method for fabricating the same

Abstract

A method for fabricating a contact of a semiconductor device includes the steps of forming a dielectric layer having a contact hole on a semiconductor substrate, forming an outgassing barrier layer comprising a poly-silicon layer to cover at least inner walls of the contact hole in order to prevent undesired outgassing from the dielectric layer, and depositing an aluminum layer on the outgassing barrier layer. The contact structure of the semiconductor device includes the aluminum layer filled in the contact layer formed on the semiconductor substrate, and the outgassing barrier layer formed under the aluminum layer to prevent outgassing from the dielectric layer. A fine contact can be formed along with the aluminum layer, thereby realizing the contact structure of a lower contact resistance. As a result, it is possible to realize stabilization of an overall contact resistance of the semiconductor device.

Dependencies are inferred from the claim text.