Method of controlling interface layer thickness in high dielectric constant film structures including growing and annealing a chemical oxide layer
AssigneeTokyo Electron Limited
InventorRobert D Clark
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Abstract
A method for controlling interface layer thickness in high dielectric constant (high-k) film structures found in semiconductor devices. According to one embodiment, the method includes providing a monocrystalline silicon substrate, growing a chemical oxide layer on the monocrystalline silicon substrate in an aqueous bath, vacuum annealing the chemical oxide layer, depositing a high-k film on the vacuum annealed chemical oxide layer, and optionally vacuum annealing the high-k film. According to another embodiment, the method includes depositing a high-k film on a chemical oxide layer, and vacuum annealing the high-k film.
Claims12
A method for processing a substrate, the method comprising:
- providing a monocrystalline silicon substrate;
- growing a chemical oxide layer on the monocrystalline silicon substrate in an aqueous bath;
- vacuum annealing the chemical oxide layer, wherein vacuum annealing the chemical oxide layer is performed in a processing system without exposing the chemical oxide layer to an inert gas;
- and
- depositing a high-k (high dielectric constant) film on the vacuum annealed chemical oxide layer.
Dependencies are inferred from the claim text.