Method for introducing impurities and apparatus for introducing impurities
AssigneePanasonic Corporation
InventorsYuichiro Sasaki, Bunji Mizuno, Cheng-Guo Jin
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Abstract
A method for introducing impurities includes a step for forming an amorphous layer at a surface of a semiconductor substrate, and a step for forming a shallow impurity-introducing layer at the semiconductor substrate which has been made amorphous, and an apparatus used therefore. Particularly, the step for forming the amorphous layer is a step for irradiating plasma to the surface of the semiconductor substrate, and the step for forming the shallow impurity-introducing layer is a step for introducing impurities into the surface which has been made amorphous.
Claims12
A method for introducing impurities, comprising:
- a first step for irradiating a plasma containing hydrogen to a surface of a substrate so as to form an amorphous layer at the surface for the substrate;
- a second step for introducing impurities into the surface of the substrate at which the amorphous layer has been formed;
- and
- an annealing after the second step,
- wherein the first step is performed at the same time as the second step,
- the annealing step is a step for activating the impurities,
- a bias voltage in time of irradiating the plasma is more than 30V (inclusive) and less than 310V (inclusive),
- the irradiating time regarding the plasma is not shorter than 5 second (inclusive) and shorter than 70 second (inclusive), and
- the substrate is a single crystalline silicon substrate.
A method for introducing impurities, comprising:
- a first step for irradiating plasma containing hydrogen to a surface of a film so as to form an amorphous layer at the surface for the film;
- a second step for introducing impurities into the surface of the film at which the amorphous layer has been formed;
- and
- an annealing step after the second step,
- wherein the first step is performed at the same time as the second step,
- the annealing step is a step for activating the impurities,
- a bias voltage in time of irradiating the plasma is more than 30V (inclusive) and less than 310V (inclusive),
- the irradiating time regarding the plasma is not shorter than 5 second (inclusive) and shorter than 70 second (inclusive), and
- the film is made of a single crystalline silicon.
Dependencies are inferred from the claim text.