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US 7,741,188 B2Granted
Deep trench (DT) metal-insulator-metal (MIM) capacitor
AssigneeInternational Business Machines Corporation
InventorsThomas W. Dyer, Eduard A. Cartier, Michael P. Chudzik, Naim Moumen
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Abstract
A deep trench metal-insulator-metal (MIM) capacitor in an SOI-type substrate. In the deep trench, a layer of TiN, followed by a layer of high-k dielectric, followed by a second layer of TiN. The resulting capacitor is completely buried below the SOI layer, thereby allowing for subsequent structures to be placed over the deep trench.
Claims16
Method of forming a deep trench metal-insulator-metal (MIM) capacitor in an SOI-type substrate having a layer of silicon (SOI) atop a buried oxide (BOX) layer which is atop an underlying substrate, comprising:
- forming a deep trench (DT) extending through the SOI layer and the BOX layer, and into the underlying substrate;
- depositing a thin, conformal layer of a first conductive material to serve as a first of two conductive electrodes for a capacitor being formed in the deep trench;
- removing a portion of the first conductive material from a top portion of the deep trench, recessing it to below the SOI layer;
- depositing a dielectric layer covering sidewalls and a bottom of the deep trench, and the first conductive material;
- filling the deep trench with a second conductive material, to serve as a second of the two conductive electrodes for a capacitor being formed in the deep trench;
- and
- recessing the second conductive material so that its top surface is recessed below the SOI layer.
4 more elements
Dependencies are inferred from the claim text.