Methods of forming capacitors
AssigneeMicron Technology, Inc.
InventorsMatthew W. Miller, Cem Basceri
Life of this patent
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Abstract
A method of forming a capacitor includes forming a first capacitor electrode over a semiconductor substrate. A capacitor dielectric region is formed onto the first capacitor electrode. The capacitor dielectric region has an exposed oxide containing surface. The exposed oxide containing surface of the capacitor dielectric region is treated with at least one of a borane or a silane. A second capacitor electrode is deposited over the treated oxide containing surface. The second capacitor electrode has an inner metal surface contacting against the treated oxide containing surface. Other aspects and implementations are contemplated.
Claims24
A method of forming a capacitor, comprising:
- forming a first capacitor electrode over a semiconductor substrate, the first capacitor electrode comprising an exposed metal surface;
- treating the exposed metal surface of the first capacitor electrode with at least one of a borane or a silane without depositing any layer onto the exposed metal surface during any of said treating;
- after said treating with at least one of the borane or the silane without depositing any layer onto the exposed metal surface during any of said treating, then forming a capacitor dielectric region onto the first capacitor electrode, the capacitor dielectric region comprising an oxide-containing surface received contacting against the treated metal surface of the first capacitor electrode;
- and
- forming a second capacitor electrode over the capacitor dielectric region.
A method of forming a capacitor, comprising:
- forming a first capacitor electrode consisting essentially of metal over a semiconductor substrate, the first capacitor electrode comprising an exposed metal surface;
- treating the exposed metal surface of the first capacitor electrode with at least one of a borane or a silane at a temperature from 200° C. to 500° C. and a pressure from 1 Torr to 100 Torr for at least 1 second, the treating being void of depositing any layer onto the exposed metal surface during any of said treating;
- after said treating with at least one of the borane or the silane without depositing any layer onto the exposed metal surface during any of said treating, then forming a capacitor dielectric region onto the first capacitor electrode, the capacitor dielectric region comprising an oxide-containing surface received contacting against the treated metal surface of the first capacitor electrode;
- and
- forming a second capacitor electrode over the capacitor dielectric region.
A method of forming a capacitor, comprising:
- forming a first capacitor electrode over a semiconductor substrate, the first capacitor electrode comprising an exposed metal surface;
- treating the exposed metal surface of the first capacitor electrode with at least one borane and with at least one silane;
- forming a capacitor dielectric region onto the first capacitor electrode, the capacitor dielectric region comprising an oxide-containing surface received contacting against the treated metal surface of the first capacitor electrode;
- and
- forming a second capacitor electrode over the capacitor dielectric region.
Dependencies are inferred from the claim text.