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US 7,741,173 B2Granted
Method for forming a metal oxide film
AssigneeElpida Memory, Inc.
InventorsKenichi Koyanagi, Hiroshi Sakuma
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Abstract
A method for forming a capacitor insulation film includes the step of depositing a monoatomic film made of a metal by supplying a metal source including the metal and no oxygen, and depositing a metal oxide film including the metal by using a CVD technique. The method provides the metal oxide film having higher film properties with a higher throughput.
Claims18
A method for forming a capacitor insulation film in a semiconductor device, the method comprising the steps of:
- supplying material gas which provides OH base on an underlying film;
- depositing a monoatomic film by supplying a metal source including compound gas using an atomic layer deposition technique;
- and
- forming a metal oxide film by supplying metal organic compound gas and oxidizing gas using a chemical vapor deposition technique;
- wherein the monoatomic film and the metal oxide film comprise the same metal and the steps are performed in sequence without reverting to a prior step.
2 more elements
A method for forming a capacitor insulation film in a semiconductor device, the method comprising the steps of:
- (a) supplying material gas which provides OH base on a surface of a bottom electrode of the capacitor;
- (b) forming a monoatomic film including a metal on the bottom electrode by using an atomic layer deposition technique which supplies a compound including the metal and does not supply oxygen as a source gas;
- and
- (c) forming a metal oxide film on the monoatomic film by supplying metal compound gas and oxidizing gas using a chemical vapor deposition technique, wherein the monoatomic film and the metal oxide film comprise the same metal.
1 more element
Dependencies are inferred from the claim text.