Method of fabricating thin film transistor and organic electro-luminescent display device

A method of fabricating an organic electro-luminescent display (OLED) device, comprising:

• forming a first gate and a second gate on a substrate;
• forming a gate insulator on the substrate to cover the first gate and the second gate, wherein the gate insulator has a contact window opening that exposes a portion of the second gate;
• forming a first source/drain layer, a second source/drain layer, and an anode on the gate insulator, wherein a portion of the first source/drain layer is filled in the contact window opening such that the first drain layer is electrically connected to the second gate, and the second drain layer is electrically connected to the anode;
• forming an isolated layer on the gate insulator, wherein the isolated layer has a first opening, a second opening, and a third opening, respectively exposing a portion of the gate insulator and a portion of the first source/drain layer above the first gate, a portion of the gate insulator and a portion of the second source/drain layer above the second gate, and a portion of the anode, wherein the isolated layer is an inorganic material, and the inorganic material includes silicon nitride, silicon oxide, or a hygroscopic material;
• forming a first channel layer and a second channel layer in the first opening and the second opening of the isolated layer respectively, wherein the first channel layer and the second channel layer protrude above the first and the second openings to cover the isolated layer and electrically connected to the first source/drain layer and the second source/drain layer respectively;
• forming a luminescent layer and a cathode sequentially in the third opening of the isolated layer, wherein the luminescent layer covers a portion of the anode, and the cathode covers the luminescent layer, and
• forming a packaging substrate to cover the first channel layer, the second channel layer, the luminescent layer and the cathode.