Back to results
US 7,741,159 B2Granted
Semiconductor device having channel with cooling fluid and manufacturing method thereof
AssigneeKabushiki Kaisha Toshiba
InventorHisato Oyamatsu
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a semiconductor substrate, a first diffusion region formed in the semiconductor substrate, a semiconductor element formed in the first diffusion region, and a channel formed in the first diffusion region to receive a cooling fluid.
Claims9
A method of manufacturing a semiconductor device, comprising:
- forming, in an upper surface of a semiconductor substrate in which a semiconductor element is to be formed, a plurality of trenches with an equal depth such that said plurality of trenches extend in a first direction;
- and
- forming a channel which receives a cooling fluid in the upper surface of the semiconductor substrate by annealing the semiconductor substrate such that the semiconductor substrate viscously fluidifies receiving in said channel a cooling fluid.
A method of manufacturing a semiconductor device, comprising:
- forming, in an upper surface of a semiconductor substrate in which a semiconductor element is to be formed, a first trench and a second trench whose aspect ratio defined by a ratio of a depth to a width is higher than an aspect ratio of the first trench;
- and
- burying an insulator in the first trench and the second trench, thereby forming a channel surrounded by the insulator in the second trench to receive a cooling fluid receiving in said channel a cooling fluid.
A method of manufacturing a semiconductor device, comprising:
- forming a semiconductor element in an upper surface of a semiconductor substrate;
- forming an interlayer dielectric layer on the upper surface of the semiconductor substrate;
- forming, in the interlayer dielectric layer, a trench as a channel which receives a cooling fluid;
- forming a first metal layer in the trench to fill the trench;
- forming an insulating layer on the interlayer dielectric layer and the first metal layer;
- forming, in the insulating layer, a first hole and a second hole which expose two ends of the first metal layer;
- and
- wet-etching the first metal layer receiving in said channel a cooling fluid.
5 more elements
A method of manufacturing a semiconductor device, comprising:
- forming a trench as a channel which receives a cooling fluid, in an upper surface of a semiconductor substrate in which a semiconductor element is to be formed;
- and
- forming a semiconductor layer on the semiconductor substrate receiving in said channel a cooling fluid and above the trench.
A method of manufacturing a semiconductor device, comprising:
- forming a trench as a channel which receives a cooling fluid, in an upper surface of a semiconductor substrate in which a semiconductor element is to be formed;
- forming an insulating layer in the trench to fill the trench;
- forming a protective layer on the semiconductor substrate and the insulating layer;
- selectively etching the protective layer to expose two ends of the insulating layer;
- and
- wet-etching the insulating receiving in said channel a cooling fluid.
3 more elements
Dependencies are inferred from the claim text.