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US 7,740,993 B2Granted
Mask for sequential lateral solidification (SLS) process and a method for crystallizing amorphous silicon by using the same
AssigneeAu Optronics Corporation
InventorMing-Wei Sun
Life of this patent
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Abstract
A mask for sequential lateral solidification (SLS) processes including at least one first window, one second window, one third window, and one fourth window is provided. Each window has a length extending longitude on the mask. The second window is aligned to the first window. The width of the first window is greater than that of the second window. The fourth window is aligned to the third window. The width of the third window is greater than that of the fourth window.
Claims25
A mask utilized in sequential lateral solidification (SLS) processes to form a polysilicon layer on an amorphous silicon layer, comprising:
- at least one first window having a length extending along a first direction, wherein the width of the first window is twice a predetermined value, wherein the predetermined value is a desired grain length of the polysilicon layer divided by a transverse magnification with which the mask is projected on the amorphous silicon layer;
- at least one second window having a length extending along the first direction and aligned to the first window with a width smaller than that of the first window;
- at least one third window having a length extending along the first direction;
- and
- at least one fourth window having a length extending along the first direction and aligned to the third window with a width greater than that of the third window, wherein each of the windows is spaced apart from each other by an intervening non-window portion, and each of the windows does not have any intervening non-window portions.
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Dependencies are inferred from the claim text.