Copper alloy sputtering target process for producing the same and semiconductor element wiring
AssigneeNippon Mining & Metals Co., Ltd.
InventorTakeo Okabe
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Abstract
Provided is a copper alloy sputtering target containing 0.01 to (less than) 0.5 wt % of at least 1 element selected from Al or Sn, and containing Mn or Si in a total amount of 0.25 wtppm or less. The above copper alloy sputtering target allows the formation of a wiring material for a semiconductor element, in particular, a seed layer being stable, uniform and free from the occurrence of coagulation during electrolytic copper plating and exhibits excellent sputtering film formation characteristics. A semiconductor element wiring formed with this target is also provided.
Claims4
A copper alloy sputtering target for forming a thin film seed layer for semiconductor wiring, consisting of:
- 0.01 to less than 0.5 wt % of Al for preventing coagulation upon plating on the seed layer;
- at least one of Mn or Si or both in a total amount of 0.03 wtppm to 0.25 wtppm for improving oxidation resistance;
- at least one element selected from the group consisting of Sb, Zr, Ti, Cr, Ag, Au, Cd, In and As in a total amount of 0.13 wtppm to 1.0 wtppm for improving oxidation resistance;
- and
- a remainder being copper.
Dependencies are inferred from the claim text.