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US 7,740,704 B2Granted
High rate atomic layer deposition apparatus and method of using
AssigneeTokyo Electron Limited
InventorEric J. Strang
Life of this patent
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Abstract
A processing system for performing atomic layer deposition (ALD) including a process chamber, a substrate holder provided within the process chamber, and a gas injection system configured to supply a first process gas and a second process gas to the process chamber. The gas injection system is configured to introduce the first process gas and the second process gas to the processing chamber at a first location and a second location, wherein at least one of the first process gas and the second process gas is alternatingly and sequentially introduced between the first location and the second location.
Claims21
An atomic layer deposition (ALD) system for depositing a film on a substrate comprising:
- a processing chamber;
- a substrate holder coupled to said process chamber and configured to support said substrate;
- a pumping system coupled to said process chamber and configured to evacuate said process chamber;
- a plasma source coupled to said process chamber and configured to generate plasma in said process chamber;
- and a gas injection system including first and second nozzles, protruding within said process chamber, said first and second nozzles each introduce a first process gas and a second process gas to said processing chamber, said first and second process gases are delivered unmixed;
- said first nozzle introduces said unmixed first and second process gases at a first location, and said second nozzle introduces said unmixed first and second process gases at a second location different than the first location, said first and second nozzles each including, a first gas injection valve, a first gas line, a first gas injection orifice configured to introduce said first process gas unmixed into the process chamber, a second gas injection valve, a second gas line, and second gas injection orifice configured to introduce said second process gas unmixed into the process chamber, the first and second gas injection valves of the first nozzle are different than the first and second gas injection valves of the second nozzle;
- a controller coupled to the ALD system configured to control independently said first and second nozzles such that at least one of said first process gas and said second process gas is alternatingly and sequentially introduced between said first location and said second location, and said first process gas and said second process gas is alternatingly and sequentially introduced at each of said nozzles.
4 more elements
An atomic layer deposition system having a processing chamber and substrate holder, the system comprising:
- first means for introducing a first process gas to said processing chamber at a first location and a second location, said first and second locations being different, said first means for introducing the first process gas protruding within said process chamber, said first means for introducing process gas at the first location including, first means for introducing said first process gas unmixed into the process chamber, and first means for introducing said second process gas unmixed into the process chamber;
- second means for introducing a second process gas to said processing chamber at said first location and said second location, said second means for introducing the second process gas protruding within said process chamber, said second means for introducing process gas at the second location including, second means for introducing said first process gas unmixed into the process chamber, and second means for introducing said second process gas unmixed into the process chamber;
- and means for producing a plasma in said processing chamber, means for independently controlling each of said first means for introducing first and second process gases at the first location and second means for introducing first and second process gases at the second location such that at least one of said first process gas and said second process gas is alternatingly and sequentially introduced between said first location and said second location, and at least one of said first process gas and said second process gas is alternatingly and sequentially introduced at each location;
- wherein (a) said first and second means for introducing said first process gas unmixed at said first and second locations are separate means and (b) said first and second means for introducing said second process gas unmixed at said first and second locations are separate means.
1 more element
Dependencies are inferred from the claim text.