Semiconductor devices that include germanium nanofilm layer disposed within openings of silicon dioxide layer

A semiconductor device comprising:

• a silicon substrate of a first conductivity-type;
• an intrinsic silicon layer disposed on said substrate;
• an SiO2 layer disposed on the intrinsic silicon layer and having one or more openings formed therein in which the surface of the intrinsic silicon layer is exposed;
• and
• a germanium nanofilm layer of a second conductivity-type disposed in said openings and in direct physical contact with said exposed regions of the intrinsic silicon layer.

A semiconductor device comprising:

• a silicon substrate of a first conductivity-type;
• an SiO2 layer disposed on the silicon substrate and having one or more openings formed therein so that a surface of silicon substrate is exposed, wherein said one or more openings have a first depth;
• an intrinsic germanium nanofilm layer disposed in said openings and in direct physical contact with said exposed regions of the silicon substrate so that at least a portion of the germanium nanofilm layer is in direct physical contact with said silicon substrate;
• and
• a silicon layer of a second conductivity type disposed in said one or more openings so that the intrinsic germanium nanofilm layer is disposed between the silicon substrate and the silicon layer.