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US 7,735,046 B2Granted
E-fuse and method
AssigneeInternational Business Machines Corporation
InventorIgor Arsovski
Life of this patent
Estimating the term…
Abstract
An e-fuse circuit, a method of programming the e-fuse circuit, and a design structure of the e-fuse circuit. The method includes in changing the threshold voltage of one selected field effect transistor of two field effect transistors connected to different storage nodes of the circuit so as to predispose the circuit place the storage nodes in predetermined and opposite states.
Claims17
A design structure embodied in a machine readable medium for designing, manufacturing, or testing a design, the design structure comprising:
- a first field effect transistor having drain connected to a first storage node, a gate connected to a second storage node and a source connected to a first source/drain of a second field effect transistor, a second source/drain of said second field effect transistor connected to a first power supply line;
- a third field effect transistor having a drain connected to said second storage node, a gate connected to said first storage node and a source connected to said first source/drain of said second transistor;
- and
- means for sensing the states of said first and second storage nodes.
1 more element
Dependencies are inferred from the claim text.