MOSFET modeling for IC design accurate for high frequencies
AssigneeCadence Design Systems, Inc.
InventorsXisheng Zhang, Hancheng Liang, Zhihong Liu, Jianhe Guo
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Abstract
The present invention presents methods for modeling the high frequency and noise characterization of MOSFETs. The models may be readily implemented as part of a SPICE or other simulation in a design flow. In particular, this invention is capable of providing a sub-circuit representation of a MOSFET that can accurately predicate a MOSFET's low frequency, high frequency, and noise characterizations. An interface is described through which a user may simultaneously optimize all of these characterizations. Further, methods are presented for building models that can predicate the variations in MOSFETs due to manufacturing processes and generate a corresponding corner model.
Claims9
A computer-implemented method of graphically presenting parameter sensitivity of a sub-circuit of a non-linear device, the method comprising:
- receiving a model of the sub-circuit, the model of the sub-circuit being dependent upon a plurality of model specific parameters;
- receiving a set of input variables to be presented, wherein said input variables are selected from the model specific parameters;
- receiving a simulation target set to be displayed, wherein elements of the simulation target set are derivable from response characteristics of the sub-circuit as determined by the model;
- and
- dynamically providing on a graphical user interface on a computer monitor a graphical representation of the simulation target set based upon values of said input variables.
Dependencies are inferred from the claim text.