Evanescent III-V silicon photonics device with spin coat bonding

A method to form a hybrid photonics device, comprising:

• applying a liquid adhesive to a silicon wafer to form a bonding layer on the silicon wafer, the silicon wafer having one or more features formed therein, and the bonding layer comprising a thickness of about 100 nanometers;
• bonding a non-silicon chip to the silicon wafer via the bonding layer, the non-silicon chip being disposed proximate to the one or more features of the silicon wafer, the non-silicon portion comprising a III-V material and a multiple quantum well region;
• and
• fabricating one or more photonics devices in the silicon chip after said bonding to couple one or more photonics devices with one or more features of the silicon wafer, to form a hybrid photonics device, wherein an optical mode of the silicon wafer may at least partially overlap with a photonics device in the non-silicon chip to obtain gain from the photonics device in the non-silicon chip, and wherein the non-silicon portion comprises about a 5% multiple quantum well confinement factor.

A photonics system, comprising:

• an optical transmitter comprising one or more hybrid photonics devices, or an optical receiver comprising one or more hybrid photonics devices, or combinations of a transmitter and a receiver;
• wherein the one or more hybrid photonics devices of the optical transmitter or the optical receiver, or combinations thereof, comprises:
• a silicon portion having one or more features formed therein;
• a non-silicon portion comprising one or more photonics devices proximate to the one or more features of the silicon portion, the non-silicon portion comprising a III-V material and a multiple quantum well region;
• and
• a bonding layer coupling the silicon portion with the non-silicon portion, the non-silicon portion being bonded to the silicon portion via the bonding layer prior to patterning of the one or more photonics devices, the bonding layer comprising a thickness of about 100 nanometers;
• wherein an optical mode of the silicon portion may at least partially overlap with a photonics device in the non-silicon portion to obtain gain from the photonics device in the non-silicon portion, and wherein the non-silicon portion comprising about a 5% multiple quantum well confinement factor.