Nitride semiconductor laser device and method of producing the same
AssigneeSharp Kabushiki Kaisha
InventorsPablo Vaccaro, Yuhzoh Tsuda
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Abstract
A nitride semiconductor laser device has a semiconductor multi-layer structure that includes a lower clad layer of a first conductive type, an active layer, and an upper clad layer of a second conductive type stacked in this order on a substrate, wherein a layer under the active layer includes a stripe-like trench; the semiconductor multi-layer structure includes a stripe-like optical cavity arranged along the stripe-like trench; the stripe-like trench has a narrower width in its both end regions compared to its central main region; and the active layer is formed of a nitride semiconductor containing In.
Claims6
A nitride semiconductor laser device comprising a semiconductor multi-layer structure including at least a lower clad layer of a first conductive type, an active layer, and an upper clad layer of a second conductive type stacked in this order on a substrate, wherein
- a layer under said active layer includes a stripe-like trench;
- said semiconductor multi-layer structure includes a stripe-like optical cavity arranged along said stripe-like trench;
- said stripe-like trench has a narrower width in its both end regions as compared with its central main region;
- and
- said active layer is formed of a nitride semiconductor containing In.
Dependencies are inferred from the claim text.