Back to results
US 7,733,735 B2Granted
Semiconductor storage device incorporated into a system LSI with finer design rules
AssigneePanasonic Corporation
InventorKenichi Origasa
Life of this patent
Estimating the term…
Abstract
In the present invention, a row decoder circuit is made up of a transistor having a first gate oxide film thickness, a transistor having a second gate oxide film thickness, and a transistor having a third gate oxide film thickness. Thus even a control circuit at a lower voltage can drive word lines at high speeds while achieving reliability.
Claims13
A semiconductor storage device, comprising:
- memory cells;
- word lines connected to the memory cells;
- a row decoder circuit connected to the word lines;
- and
- a control circuit for controlling access of the row decoder circuit to the memory cells through the word lines,
- wherein the control circuit is made up of a transistor in which a gate oxide film has a first thickness, and
- the row decoder circuit is made up of a transistor in which the gate oxide film has the first thickness,
- a transistor in which the gate oxide film has a second thickness larger than the first thickness, and
- a transistor in which the gate oxide film has a third thickness larger than the second thickness.
6 more elements
Dependencies are inferred from the claim text.