Non-volatile semiconductor storage device
AssigneeKabushiki Kaisha Toshiba
InventorsHiroaki Nakano, Toshimasa Namekawa, Hiroshi Ito, Osamu Wada, Atsushi Nakayama
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AssigneeKabushiki Kaisha Toshiba
InventorsHiroaki Nakano, Toshimasa Namekawa, Hiroshi Ito, Osamu Wada, Atsushi Nakayama
Estimating the term…
A memory cell array includes a plurality of non-volatile semiconductor memory elements, each memory element storing data in a non-volatile manner. A shift register stores data read from the semiconductor memory element and sequentially transfers the data outside, the shift register also stores data transferred from outside and stores the data in the semiconductor memory element. A syndrome generation circuit is connected to an output terminal of the shift register, the syndrome generation circuit generating syndrome of data output from the output terminal. An error-correction circuit uses the data and the syndrome to correct an error of the data.
A non-volatile semiconductor storage device comprising:
A non-volatile semiconductor storage device comprising:
A non-volatile semiconductor storage device comprising:
Dependencies are inferred from the claim text.
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In which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of…
Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers: data managing, e.g. manipulating data before…
In which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of…
Static stores
About 2 years 2 months of term left · ends 30 Dec 2028 (estimated)
This application is based on and claims the benefit of priority from prior Japanese Patent Application No. 2006-281651, filed on Oct. 16, 2006 the entire contents of which are incorporated herein by reference.
1. Field of the Invention
The present invention relates to a non-volatile semiconductor storage device.
FIG. 1 illustrates a first example of a non-volatile semiconductor storage device using an e-fuse element.
FIG. 2 illustrates a first example of a non-volatile semiconductor storage device using an e-fuse element.
FIG. 3 illustrates a second example of a non-volatile semiconductor storage device using an e-fuse element.
With reference to the accompanying drawings, embodiments of the present invention will now be described in detail below.
The following embodiments show examples where a semiconductor memory element in a non-volatile semiconductor storage device is the so-called e-fuse element. The present invention is not, however, limited thereto, and may be applied, to a variety of non-volatile memory cells such as a laser fuse element and a mask ROM.
With reference to the accompanying drawings, a description is first given of examples (a first example and a second example) of the non-volatile semiconductor storage device including the e-fuse element to which this embodiment may be applied, and a description is then given of non-volatile semiconductor storage devices according to the embodiments of the present invention.