Semiconductor memory device with internal voltage generating circuit and method for operating the same
AssigneeHynix Semiconductor Inc.
InventorJa-Seung Gou
Life of this patent
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Abstract
Semiconductor memory device with internal voltage generating circuit and method for operating the same includes a high voltage detecting circuit configured to detect a voltage level of a high voltage and activate a pumping determining signal when the voltage level of the high voltage is below a predetermined level; a pumping circuit configured to perform a pumping operation in response to the pumping determining signal and an active signal; and an auxiliary pumping circuit configured to perform the pumping operation in response to the pumping determining signal and a bank active pulse signal.
Claims20
A semiconductor memory device, comprising:
- a high voltage detecting circuit configured to detect a voltage level of a high voltage and activate a pumping determining signal when the voltage level of the high voltage is below a predetermined level;
- a pumping circuit configured to perform a pumping operation in response to the pumping determining signal and an active signal;
- and
- an auxiliary pumping circuit configured to perform the pumping operation in response to the pumping determining signal and a bank active pulse signal.
A semiconductor memory device, comprising:
- a plurality of banks using a high voltage;
- a high voltage detecting unit configured to detect a voltage level of the high voltage and activate a pumping determining signal when the voltage level of the high voltage is below a predetermined level;
- and
- a pumping circuit configured to perform a pumping operation in response to the pumping determining signal and a bank active pulse signal indicating a timing point when the banks are enabled for performing a read/write operation.
A method for operating a semiconductor memory device, the method comprising:
- detecting a voltage level of a high voltage and activating a pumping determining signal when the detected voltage level of the high voltage is below a predetermined level;
- performing a pumping operation in response to the pumping determining signal and a bank active pulse signal indicating a timing point when the banks are enabled for performing a read/write operation;
- and
- performing a read operation and a write operation by using the high voltage.
Dependencies are inferred from the claim text.