Flash memory device and erase method thereof
AssigneeHynix Semiconductor Inc.
InventorJong Hyun Wang
Life of this patent
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Abstract
A flash memory device and an erase method thereof are included. The erase method includes performing an erase operation of a memory cell block including a plurality of pages, performing an erase verify operation and storing unerased page information about a page including unerased memory cells that have not been normally erased, and performing an additional erase operation of the page including the unerased memory cells based on the unerased page information. When the unerased memory cells exist, the erase verify operation and the additional erase operation are performed repeatedly.
Claims10
An erase method of flash memory, the method comprising:
- performing an erase operation of a memory cell block including a plurality of pages;
- performing an erase verify operation and storing unerased page information about a page including unerased memory cells that have not been normally erased;
- and
- performing an additional erase operation of the page including the unerased memory cells based on the unerased page information,
- wherein when the unerased memory cells exist, the erase verify operation and the additional erase operation are performed repeatedly.
A flash memory device, comprising:
- a plurality of memory cell blocks respectively including a plurality of pages;
- a global control circuit to apply an erase operation voltage to each of the pages at the time of an erase operation, store unerased page information corresponding to a page including unerased memory cells that have not been normally erased through an erase verify operation, and apply the erase operation voltage so that only the unerased pages are erased again at the time of an additional erase operation;
- a X-decoder to output a block signal for selecting one of the memory cell blocks according to an address signal;
- and
- a block switch for transferring an erase operation voltage, output from the global control circuit, to a selected memory cell block according to the block select signal.
Dependencies are inferred from the claim text.