Memory device including thermal conductor located between programmable volumes
AssigneeSamsung Electronics Co., Ltd.
InventorsYoung-Tae Kim, Myung-Jin Park, Keun-Ho Lee
Life of this patent
Estimating the term…
Abstract
In one aspect, a memory device is provided which includes a plurality of bit lines extending in a first direction, a plurality of word lines extending in a second direction, an array of programmable volumes electrically connected between the bit lines and word lines, and thermally conductive striped patterns located between the programmable volumes of the array and extending in at least one of the first and second directions.
Claims38
A memory device comprising:
- a plurality of bit lines extending in a first direction;
- a plurality of word lines extending in a second direction;
- an array of programmable volumes electrically connected between the bit lines and word lines;
- and
- thermally conductive striped patterns located between the programmable volumes of the array and extending in at least one of the first and second directions,
- wherein the thermally conductive striped patterns do not contact the programmable volumes of the array.
A memory device comprising a thermally conductive material located between first and second programmable volumes of adjacent first and second memory cells, wherein the thermally conductive material does not contact the first and second programmable volumes.
A memory device comprising a continuous phase-change material pattern extending between adjacent first and second phase-change memory cells, and a thermally conductive pattern embedded in the phase-change material pattern between the first and second phase-change memory cells.
A memory device, comprising:
- a plurality of phase-change material patterns extending parallel to each other in a first direction, each of the phase-change material patterns including a plurality of phase-change regions of respective phase-change memory cells;
- and
- a plurality of thermally conductive patterns extending parallel to each other in a second direction and between adjacent phase-change regions of the plurality of phase-change material patterns,
- wherein the thermally conductive patterns do not contact the phase-change material patterns.
The memory device of 25, wherein the plurality of thermally conductive patterns is a first plurality of thermally conductive patterns, and
- wherein the phase-change memory further comprises a second plurality of thermally conductive patterns which extend in the first direction so as to intersect the first plurality of thermally conductive patterns, the second thermally conductive patterns extending between adjacent phase-change regions included in different phase-change material patterns.
A memory device comprising:
- an array of phase-change regions of respective phase-change memory cells aligned in rows and columns;
- and
- at least one thermally conductive element located between adjacent phase-change regions within in each row of the phase-change memory cells,
- wherein the thermally conductive element does not contact the adjacent phase-change regions.
A memory device comprising:
- an insulating layer comprising first and second through-holes aligned over first and second electrodes;
- first and second programmable volumes located within the first and second through-holes, respectively;
- and
- a metal or metal alloy which is located between the first and second programmable volumes and which is electrically isolated from the first and second programmable volumes.
A portable electronic system comprising a microprocessor, a power supply, and a non-volatile memory, the non-volatile memory comprising a thermally conductive material located between first and second programmable volumes of adjacent first and second memory cells, wherein the thermally conductive material does not contact the first and second programmable volumes.
Dependencies are inferred from the claim text.