Plateline driver for a ferroelectric memory
AssigneeTexas Instruments Incorporated
InventorSudhir K. Madan
Life of this patent
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Abstract
One embodiment relates to a ferroelectric memory device. The ferroelectric memory device includes a memory array comprising one or more ferroelectric memory cells that are arranged in a number of plateline groups. The memory device also includes a plateline driver configured to boost a plateline voltage above a supply voltage within the plateline driver, and provide the boosted plateline voltage along platelines associated with the plateline driver. Other methods and systems are also disclosed.
Claims20
A ferroelectric memory device, comprising:
- a power supply that provides a supply voltage VDD;
- a memory array comprising one or more ferroelectric memory cells that are arranged in a number of plateline groups;
- a plateline driver configured to receive the supply voltage, develop an initial plateline voltage based on the supply voltage, boost the initial plateline voltage above the supply voltage, and provide the boosted plateline voltage along a plateline associated with a predetermined plateline group.
A ferroelectric memory device, comprising:
- a memory array comprising one or more ferroelectric memory cells that are arranged in a number of segments, where a segment includes at least some of the ferroelectric memory cells which are arranged in at least two plateline groups;
- a power supply that provides a supply voltage VDD;
- a set of plateline drivers associated with the segment;
- where an individual plateline driver is configured to receive the supply voltage, develop an initial plateline voltage based on the supply voltage, boost the initial plateline voltage above the supply voltage, and provide the boosted plateline voltage along a plateline associated with an individual plateline group within the segment.
A method of writing a data value to a ferroelectric memory cell, comprising:
- using a supply voltage to develop an initial plateline voltage on a plateline associated with a ferroelectric memory cell;
- isolating the plateline from the supply voltage;
- while the plateline is isolated from the supply voltage, boosting the initial plateline voltage to develop a boosted plateline voltage on the plateline;
- while the boosted plateline voltage is on the plateline, applying a wordline voltage and a bitline voltage to the ferroelectric memory cell to write the data value to the ferroelectric memory cell.
Dependencies are inferred from the claim text.